| scholarly article | Q13442814 |
| P356 | DOI | 10.1002/CNMA.201800181 |
| P50 | author | Wei Chen | Q57014261 |
| P2093 | author name string | Jialin Zhang | |
| Tianchao Niu | |||
| P2860 | cites work | Giant phonon-induced conductance in scanning tunnelling spectroscopy of gate-tunable graphene | Q62473994 |
| High-Performance Sodium Ion Batteries Based on a 3D Anode from Nitrogen-Doped Graphene Foams | Q62474517 | ||
| Doping graphene with boron: a review of synthesis methods, physicochemical characterization, and emerging applications | Q62481583 | ||
| Visualizing Individual Nitrogen Dopants in Monolayer Graphene | Q62499986 | ||
| Strain-Tuning Atomic Substitution in Two-Dimensional Atomic Crystals | Q62596537 | ||
| Electronic properties of the MoS2-WS2heterojunction | Q62602399 | ||
| Vacancy-induced magnetism in graphene and graphene ribbons | Q62602430 | ||
| The application of graphene and its composites in oxygen reduction electrocatalysis: a perspective and review of recent progress | Q62657179 | ||
| Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles | Q64031104 | ||
| Two-Dimensional Transition Metal Dichalcogenide Alloys: Stability and Electronic Properties | Q64031123 | ||
| Magnetism in disordered graphene and irradiated graphite | Q81913245 | ||
| Bandgap opening in graphene induced by patterned hydrogen adsorption | Q83188824 | ||
| Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties | Q83570692 | ||
| Transforming C60 molecules into graphene quantum dots | Q83667237 | ||
| The role of gap states in the energy level alignment at the organic-organic heterojunction interfaces | Q84823244 | ||
| Spin-orbit coupling in hydrogenated graphene | Q85193199 | ||
| Physical and chemical tuning of two-dimensional transition metal dichalcogenides | Q86185680 | ||
| Synthesis of lateral heterostructures of semiconducting atomic layers | Q86243106 | ||
| Rational design of two-dimensional molecular donor-acceptor nanostructure arrays | Q86741706 | ||
| Low-temperature, bottom-up synthesis of graphene via a radical-coupling reaction | Q86844119 | ||
| Continuous germanene layer on Al(111) | Q86981836 | ||
| Atomically Thin MoS 2 : A New Direct-Gap Semiconductor | Q21706555 | ||
| Topological insulators and superconductors | Q27350336 | ||
| Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides | Q27448679 | ||
| Phosphorene: an unexplored 2D semiconductor with a high hole mobility | Q28236484 | ||
| Effective passivation of exfoliated black phosphorus transistors against ambient degradation | Q28251185 | ||
| Atomically controlled substitutional boron-doping of graphene nanoribbons | Q28266571 | ||
| Type-II Weyl semimetals | Q28270263 | ||
| Black phosphorus field-effect transistors | Q28308156 | ||
| Environmental instability of few-layer black phosphorus | Q29040954 | ||
| Few-Layer Antimonene by Liquid-Phase Exfoliation | Q30368445 | ||
| Charge transfer and electronic doping in nitrogen-doped graphene | Q30402231 | ||
| Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides | Q30801159 | ||
| From Mott state to superconductivity in 1T-TaS2. | Q33346298 | ||
| Organic semiconductor density of states controls the energy level alignment at electrode interfaces | Q33877349 | ||
| Electronics and optoelectronics of two-dimensional transition metal dichalcogenides | Q34034271 | ||
| Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitions | Q34042953 | ||
| Emerging photoluminescence in monolayer MoS2. | Q34104018 | ||
| Boron nitride substrates for high-quality graphene electronics. | Q34132620 | ||
| Evidence of silicene in honeycomb structures of silicon on Ag(111). | Q34278543 | ||
| Valley-selective circular dichroism of monolayer molybdenum disulphide | Q34279416 | ||
| Bandgap engineering of strained monolayer and bilayer MoS2. | Q34354967 | ||
| Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2. | Q34393730 | ||
| Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface | Q34407805 | ||
| Few-layer MoS2: a promising layered semiconductor | Q34411655 | ||
| Buckled germanene formation on Pt(111). | Q34420574 | ||
| Detection of individual gas molecules adsorbed on graphene. | Q34657165 | ||
| Graphene: status and prospects | Q34987958 | ||
| The renaissance of black phosphorus | Q35484577 | ||
| Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures | Q35566504 | ||
| High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films | Q35669670 | ||
| Spin-orbit engineering in transition metal dichalcogenide alloy monolayers | Q36379236 | ||
| Spatially resolved electronic structures of atomically precise armchair graphene nanoribbons | Q36469582 | ||
| The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets | Q38091257 | ||
| Graphane and hydrogenated graphene | Q38107813 | ||
| Van der Waals heterostructures | Q38124232 | ||
| Graphene and graphene-based materials for energy storage applications | Q38178907 | ||
| Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides | Q38183128 | ||
| Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline. | Q38254336 | ||
| Graphene spintronics. | Q38257070 | ||
| Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques | Q38261244 | ||
| Molecularly engineered graphene surfaces for sensing applications: A review | Q38333016 | ||
| Surface-assisted Ullmann coupling. | Q38369741 | ||
| Metal-free catalysts for oxygen reduction reaction. | Q38457451 | ||
| Silicene: a review of recent experimental and theoretical investigations. | Q38516846 | ||
| Structural design of graphene for use in electrochemical energy storage devices | Q38519735 | ||
| Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects | Q38531628 | ||
| The Covalent Functionalization of Graphene on Substrates | Q38560829 | ||
| Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications | Q38617886 | ||
| Recent Advances in Two-Dimensional Materials beyond Graphene | Q38627034 | ||
| A Kinetic Pathway toward High-Density Ordered N Doping of Epitaxial Graphene on Cu(111) Using C5NCl5 Precursors | Q38684719 | ||
| Black phosphorus nanostructures: recent advances in hybridization, doping and functionalization | Q38691703 | ||
| Recent advances in graphene-based nanomaterials for fabricating electrochemical hydrogen peroxide sensors | Q38725337 | ||
| Designing high-energy lithium-sulfur batteries. | Q38837661 | ||
| 2D materials and van der Waals heterostructures | Q38912196 | ||
| Mixed-dimensional van der Waals heterostructures | Q38914863 | ||
| Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy. | Q38963528 | ||
| Kondo lattice heavy fermion behavior in CeRh2Ga2. | Q38989879 | ||
| Low temperature critical growth of high quality nitrogen doped graphene on dielectrics by plasma-enhanced chemical vapor deposition. | Q39061250 | ||
| Nanocarbon for Oxygen Reduction Electrocatalysis: Dopants, Edges, and Defects | Q39076866 | ||
| Frontiers of supramolecular chemistry at solid surfaces | Q39237314 | ||
| Synthesis, structure and applications of graphene-based 2D heterostructures | Q39425393 | ||
| Surface-assisted cyclodehydrogenation provides a synthetic route towards easily processable and chemically tailored nanographenes | Q39805286 | ||
| Graphene nanoribbon heterojunctions | Q40220374 | ||
| Probing Single Vacancies in Black Phosphorus at the Atomic Level. | Q41867606 | ||
| Large area growth and electrical properties of p-type WSe2 atomic layers | Q42030565 | ||
| Tunability of supramolecular Kagome lattices of magnetic phthalocyanines using graphene-based moire patterns as templates. | Q43274627 | ||
| Charged and metallic molecular monolayers through surface-induced aromatic stabilization | Q43791288 | ||
| Lateral Growth of Composition Graded Atomic Layer MoS(2(1-x))Se(2x) Nanosheets | Q44181069 | ||
| Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures | Q44468072 | ||
| Efficient Charge Transfer and Fine-Tuned Energy Level Alignment in a THF-Processed Fullerene-Free Organic Solar Cell with 11.3% Efficiency | Q44868457 | ||
| NANOELECTRONICS. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. | Q50873872 | ||
| Two-Step Growth of Two-Dimensional WSe2/MoSe2 Heterostructures. | Q50949442 | ||
| Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy. | Q51047547 | ||
| Vertical and in-plane heterostructures from WS2/MoS2 monolayers. | Q51049477 | ||
| Ultraclean and Direct Transfer of a Wafer-Scale MoS2 Thin Film onto a Plastic Substrate. | Q51080033 | ||
| Diffusion-Mediated Synthesis of MoS2/WS2 Lateral Heterostructures. | Q51241108 | ||
| Valley-polarized exciton dynamics in a 2D semiconductor heterostructure. | Q51496032 | ||
| Synthesis of WS2xSe2-2x Alloy Nanosheets with Composition-Tunable Electronic Properties. | Q51618871 | ||
| Anomalous Light Cones and Valley Optical Selection Rules of Interlayer Excitons in Twisted Heterobilayers. | Q51646275 | ||
| A Delamination Strategy for Thinly Layered Defect-Free High-Mobility Black Phosphorus Flakes. | Q52688224 | ||
| Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. | Q53206184 | ||
| Correlated insulator behaviour at half-filling in magic-angle graphene superlattices. | Q53439973 | ||
| Growth of alloy MoS(2x)Se2(1-x) nanosheets with fully tunable chemical compositions and optical properties. | Q53614411 | ||
| Connecting dopant bond type with electronic structure in N-doped graphene. | Q53852148 | ||
| Phonon-limited mobility inn-type single-layer MoS2from first principles | Q55084866 | ||
| Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) | Q56028095 | ||
| From Black Phosphorus to Phosphorene: Basic Solvent Exfoliation, Evolution of Raman Scattering, and Applications to Ultrafast Photonics | Q56688659 | ||
| All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures | Q57159801 | ||
| Local atomic and electronic structure of boron chemical doping in monolayer graphene | Q57165669 | ||
| Atomically precise bottom-up fabrication of graphene nanoribbons | Q57424711 | ||
| Graphene-based materials: Synthesis and gas sorption, storage and separation | Q57524308 | ||
| Direct Observation of Ordered Configurations of Hydrogen Adatoms on Graphene | Q57531169 | ||
| Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport | Q57759904 | ||
| van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates | Q57760001 | ||
| Mechanism of the Fermi level pinning at organic donor–acceptor heterojunction interfaces | Q57760380 | ||
| The Application of Highly Doped Single-Layer Graphene as the Top Electrodes of Semitransparent Organic Solar Cells | Q57826861 | ||
| Realization of a tunable artificial atom at a supercritically charged vacancy in graphene | Q58337243 | ||
| Bottom-Up Synthesis of Chemically Precise Graphene Nanoribbons | Q58338249 | ||
| Direct visualization of atomically precise nitrogen-doped graphene nanoribbons | Q58338297 | ||
| Identification of catalytic sites for oxygen reduction in iron- and nitrogen-doped graphene materials | Q58863045 | ||
| Point Defects on Graphene on Metals | Q59326430 | ||
| Lateral heterojunctions within monolayer MoSe 2 –WSe 2 semiconductors | Q59484213 | ||
| Graphene spintronics: the European Flagship perspective | Q59657514 | ||
| Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions | Q59871064 | ||
| A High-Energy Lithium-Ion Capacitor by Integration of a 3D Interconnected Titanium Carbide Nanoparticle Chain Anode with a Pyridine-Derived Porous Nitrogen-Doped Carbon Cathode | Q59905908 | ||
| Advanced Scanning Probe Microscopy of Graphene and Other 2D Materials | Q60151517 | ||
| Graphene and its composites with nanoparticles for electrochemical energy applications | Q60151872 | ||
| Missing Atom as a Source of Carbon Magnetism | Q60496635 | ||
| High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals | Q61207382 | ||
| Spatial variation of a giant spin–orbit effect induces electron confinement in graphene on Pb islands | Q61310771 | ||
| Tunable Band Gap in Hydrogenated Quasi-Free-Standing Graphene | Q61314034 | ||
| General synthesis and definitive structural identification of MN4C4 single-atom catalysts with tunable electrocatalytic activities | Q62124488 | ||
| Boron- and Nitrogen-Substituted Graphene Nanoribbons as Efficient Catalysts for Oxygen Reduction Reaction | Q62124497 | ||
| Two-dimensional transition metal dichalcogenide (TMD) nanosheets | Q62395306 | ||
| Two-dimensional semiconductor alloys: Monolayer Mo1−xWxSe2 | Q62401171 | ||
| Spatially composition-modulated two-dimensional WS2xSe2(1-x) nanosheets | Q45111398 | ||
| Controlled Synthesis of Nitrogen-Doped Graphene on Ruthenium from Azafullerene. | Q45974860 | ||
| Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices. | Q45979133 | ||
| Recent progress in 2D group-VA semiconductors: from theory to experiment. | Q46001679 | ||
| Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. | Q46075239 | ||
| Mobility engineering and a metal-insulator transition in monolayer MoS₂. | Q46083507 | ||
| Surface and Interface Engineering of Noble-Metal-Free Electrocatalysts for Efficient Energy Conversion Processes | Q46417114 | ||
| Epitaxial growth of two-dimensional stanene | Q46424867 | ||
| Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution | Q46561819 | ||
| Atomic-scale control of graphene magnetism by using hydrogen atoms. | Q46583681 | ||
| Large tunable image-charge effects in single-molecule junctions. | Q46601334 | ||
| Active sites of nitrogen-doped carbon materials for oxygen reduction reaction clarified using model catalysts. | Q46606856 | ||
| Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures | Q46688005 | ||
| Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides. | Q46802707 | ||
| Synthesis of Large-Size 1T' ReS2x Se2(1-x) Alloy Monolayer with Tunable Bandgap and Carrier Type. | Q47180523 | ||
| Recent Progress on Antimonene: A New Bidimensional Material. | Q47404819 | ||
| Probing the Interlayer Exciton Physics in a MoS2/MoSe2/MoS2 van der Waals Heterostructure | Q47685652 | ||
| One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy | Q47732330 | ||
| Growth and Simultaneous Valleys Manipulation of Two-Dimensional MoSe2-WSe2 Lateral Heterostructure | Q48055646 | ||
| Long-Lived Direct and Indirect Interlayer Excitons in van der Waals Heterostructures | Q48057120 | ||
| Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds. | Q48095534 | ||
| In-Plane Mosaic Potential Growth of Large-Area 2D Layered Semiconductors MoS2-MoSe2 Lateral Heterostructures and Photodetector Application | Q48122324 | ||
| Spin-Orbit Coupling Induced Gap in Graphene on Pt(111) with Intercalated Pb Monolayer | Q48124532 | ||
| Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform | Q48195756 | ||
| Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire | Q48226010 | ||
| Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy | Q48607685 | ||
| Electronic Transport in Two-Dimensional Materials | Q49797003 | ||
| Dynamics of Self-Assembled Cytosine Nucleobases on Graphene | Q49815168 | ||
| Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies | Q49830261 | ||
| P433 | issue | 1 | |
| P304 | page(s) | 6-23 | |
| P577 | publication date | 2018-06-27 | |
| P1433 | published in | ChemNanoMat | Q53952031 |
| P1476 | title | Surface Engineering of Two-Dimensional Materials | |
| P478 | volume | 5 |
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