scholarly article | Q13442814 |
P819 | ADS bibcode | 2015NatCo...6.8185G |
P356 | DOI | 10.1038/NCOMMS9185 |
P932 | PMC publication ID | 4569798 |
P698 | PubMed publication ID | 26345390 |
P5875 | ResearchGate publication ID | 281623691 |
P50 | author | Victor I Klimov | Q56529867 |
P2093 | author name string | Jianbo Gao | |
Andrew F Fidler | |||
P2860 | cites work | High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy Conversion | Q27451805 |
Peak external photocurrent quantum efficiency exceeding 100% via MEG in a quantum dot solar cell | Q28255590 | ||
High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films | Q28681272 | ||
Enhanced carrier multiplication in engineered quasi-type-II quantum dots | Q33851639 | ||
Electroluminescence from single monolayers of nanocrystals in molecular organic devices | Q34165893 | ||
Highly effective surface passivation of PbSe quantum dots through reaction with molecular chlorine | Q34468367 | ||
Multiple exciton generation in colloidal silicon nanocrystals | Q34654971 | ||
Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics | Q35546395 | ||
Dependence of carrier mobility on nanocrystal size and ligand length in PbSe nanocrystal solids. | Q43425411 | ||
Exciton multiplication from first principles | Q46583690 | ||
Schottky solar cells based on colloidal nanocrystal films | Q47379901 | ||
Quantum dot size dependent J-V characteristics in heterojunction ZnO/PbS quantum dot solar cells | Q47392991 | ||
Carrier multiplication in InAs nanocrystal quantum dots with an onset defined by the energy conservation limit. | Q50876317 | ||
Ultrasensitive solution-cast quantum dot photodetectors. | Q51164782 | ||
PbSe nanocrystal solids for n- and p-channel thin film field-effect transistors. | Q51342511 | ||
Mechanism of carrier photogeneration and carrier transport in molecular crystal tetracene. | Q53802114 | ||
Direct carrier multiplication due to inverse Auger scattering in CdSe quantum dots | Q54135564 | ||
Composition and Size-Dependent Extinction Coefficient of Colloidal PbSe Quantum Dots | Q57348498 | ||
Third Generation Photovoltaics based on Multiple Exciton Generation in Quantum Confined Semiconductors | Q58073545 | ||
Efficient carrier multiplication in InP nanoparticles | Q59244068 | ||
Band-like transport, high electron mobility and high photoconductivity in all-inorganic nanocrystal arrays | Q59389432 | ||
High-Energy Excitations in Silicon Nanoparticles | Q59434213 | ||
PbTe Colloidal Nanocrystals: Synthesis, Characterization, and Multiple Exciton Generation | Q59872228 | ||
Aspect Ratio Dependence of Auger Recombination and Carrier Multiplication in PbSe Nanorods | Q62118093 | ||
Multicarrier Interactions in Semiconductor Nanocrystals in Relation to the Phenomena of Auger Recombination and Carrier Multiplication | Q62512332 | ||
Evidence for Barrierless Auger Recombination in PbSe Nanocrystals: A Pressure-Dependent Study of Transient Optical Absorption | Q62512376 | ||
New Aspects of Carrier Multiplication in Semiconductor Nanocrystals | Q62512381 | ||
Carrier multiplication in semiconductor nanocrystals via intraband optical transitions involving virtual biexciton states | Q62512386 | ||
Non-Poissonian Exciton Populations in Semiconductor Nanocrystals via Carrier Multiplication | Q62512406 | ||
Quantization of Multiparticle Auger Rates in Semiconductor Quantum Dots | Q62515360 | ||
Novel optimization principles and efficiency limits for semiconductor solar cells | Q74548563 | ||
Multiexciton generation by a single photon in nanocrystals | Q79428124 | ||
Quantum simulation of multiple-exciton generation in a nanocrystal by a single photon | Q83183899 | ||
Bandlike transport in strongly coupled and doped quantum dot solids: a route to high-performance thin-film electronics | Q83910362 | ||
Colloidal quantum-dot photodetectors exploiting multiexciton generation | Q84095781 | ||
Multiple exciton generation in single-walled carbon nanotubes | Q84314233 | ||
An upper bound to carrier multiplication efficiency in type II colloidal quantum dots | Q84898266 | ||
Multiple exciton collection in a sensitized photovoltaic system | Q85171285 | ||
Experimental verification of carrier multiplication in graphene | Q87632014 | ||
Engineering colloidal quantum dot solids within and beyond the mobility-invariant regime | Q87821286 | ||
P275 | copyright license | Creative Commons Attribution 4.0 International | Q20007257 |
P6216 | copyright status | copyrighted | Q50423863 |
P407 | language of work or name | English | Q1860 |
P921 | main subject | quantum dot | Q1133068 |
P304 | page(s) | 8185 | |
P577 | publication date | 2015-09-08 | |
P1433 | published in | Nature Communications | Q573880 |
P1476 | title | Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots | |
P478 | volume | 6 |
Q41020841 | Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation |
Q50553603 | Hot exciton cooling and multiple exciton generation in PbSe quantum dots. |
Q53229158 | Opto-electro-modulated transient photovoltage and photocurrent system for investigation of charge transport and recombination in solar cells. |
Q58452000 | Solution-processed semiconductors for next-generation photodetectors |
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