Scaling carbon nanotube complementary transistors to 5-nm gate lengths

scientific article

Scaling carbon nanotube complementary transistors to 5-nm gate lengths is …
instance of (P31):
scholarly articleQ13442814

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P819ADS bibcode2017Sci...355..271Q
P356DOI10.1126/SCIENCE.AAJ1628
P698PubMed publication ID28104886

P50authorLian-Mao PengQ48322105
P2093author name stringZhiyong Zhang
Chenguang Qiu
Yingjun Yang
Donglai Zhong
Mengmeng Xiao
P2860cites workCarbon Nanotubes as Schottky Barrier TransistorsQ27348763
Ballistic carbon nanotube field-effect transistorsQ28156063
CMOS-based carbon nanotube pass-transistor logic integrated circuitsQ35801553
Toward high-performance digital logic technology with carbon nanotubesQ38241904
End-bonded contacts for carbon nanotube transistors with low, size-independent resistanceQ38957463
Short-channel transistors constructed with solution-processed carbon nanotubesQ39499461
Sub-10 nm carbon nanotube transistorQ39662238
Length scaling of carbon nanotube transistorsQ39814042
Carbon nanotube complementary wrap-gate transistorsQ40108836
Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratioQ40246259
Electronics: the road to carbon nanotube transistorsQ44925574
Enhanced performance of short-channel carbon nanotube field-effect transistors due to gate-modulated electrical contacts.Q45951144
High-kappa dielectrics for advanced carbon-nanotube transistors and logic gatesQ46211056
T-gate aligned nanotube radio frequency transistors and circuits with superior performanceQ46770788
Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltageQ47279934
Limits on silicon nanoelectronics for terascale integration.Q51602890
Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors.Q53508599
High-field electrical transport in single-wall carbon nanotubesQ54034683
Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube ArraysQ54152452
Science and Engineering Beyond Moore's LawQ56070055
The chips are down for Moore’s lawQ56626770
Properties of short channel ballistic carbon nanotube transistors with ohmic contactsQ57444029
Alignment Controlled Growth of Single-Walled Carbon Nanotubes on Quartz SubstratesQ58655031
P433issue6322
P407language of work or nameEnglishQ1860
P921main subjectcarbon nanotubeQ1778729
P304page(s)271-276
P577publication date2017-01-01
P1433published inScienceQ192864
P1476titleScaling carbon nanotube complementary transistors to 5-nm gate lengths
P478volume355

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cites work (P2860)
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