| scholarly article | Q13442814 |
| P818 | arXiv ID | 1705.08263 |
| P356 | DOI | 10.1038/S41598-017-10248-7 |
| P932 | PMC publication ID | 5575307 |
| P698 | PubMed publication ID | 28852078 |
| P50 | author | Mirza M Elahi | Q56998492 |
| Yaohua Tan | Q71004992 | ||
| P2093 | author name string | Avik W Ghosh | |
| K M Masum Habib | |||
| N Scott Barker | |||
| Han-Yu Tsao | |||
| P2860 | cites work | Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening. | Q50618945 |
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| Colloquium: Andreev reflection and Klein tunneling in graphene | Q56989104 | ||
| Billiard model of a ballistic multiprobe conductor | Q56989786 | ||
| Current saturation and steep switching in graphene PN junctions using angle-dependent scattering | Q57456980 | ||
| High-frequency performance of graphene field effect transistors with saturating IV-characteristics | Q59482849 | ||
| State-of-the-Art Graphene High-Frequency Electronics | Q62273141 | ||
| Angle-dependent carrier transmission in graphene p-n junctions | Q84752312 | ||
| Energy Band-Gap Engineering of Graphene Nanoribbons | Q21563939 | ||
| Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer | Q27335986 | ||
| Chiral tunnelling and the Klein paradox in graphene | Q29304688 | ||
| Electron optics with p-n junctions in ballistic graphene | Q30275783 | ||
| Manipulating chiral transmission by gate geometry: switching in graphene with transmission gaps | Q30457067 | ||
| 100-GHz transistors from wafer-scale epitaxial graphene. | Q34097018 | ||
| Graphene transistors | Q34118113 | ||
| Boron nitride substrates for high-quality graphene electronics. | Q34132620 | ||
| One-dimensional electrical contact to a two-dimensional material | Q34381846 | ||
| Intrinsic and extrinsic performance limits of graphene devices on SiO2. | Q34800733 | ||
| High-frequency self-aligned graphene transistors with transferred gate stacks | Q36122932 | ||
| Graphene field effect transistor without an energy gap | Q36895797 | ||
| Nanotube electronics for radiofrequency applications | Q37641012 | ||
| Electronics based on two-dimensional materials | Q38257066 | ||
| High-speed graphene transistors with a self-aligned nanowire gate | Q41893903 | ||
| Record maximum oscillation frequency in C-face epitaxial graphene transistors | Q44610397 | ||
| P275 | copyright license | Creative Commons Attribution 4.0 International | Q20007257 |
| P6216 | copyright status | copyrighted | Q50423863 |
| P433 | issue | 1 | |
| P407 | language of work or name | English | Q1860 |
| P921 | main subject | graphene | Q169917 |
| P304 | page(s) | 9714 | |
| P577 | publication date | 2017-08-29 | |
| P1433 | published in | Scientific Reports | Q2261792 |
| P1476 | title | Graphene Klein tunnel transistors for high speed analog RF applications | |
| P478 | volume | 7 |
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