scholarly article | Q13442814 |
P356 | DOI | 10.1039/C7CP05201D |
P8608 | Fatcat ID | release_6kyk2pk3xfd2vkybdb7a2e4cju |
P698 | PubMed publication ID | 28990022 |
P50 | author | Ying Dai | Q110126175 |
Baibiao Huang | Q110142029 | ||
P2093 | author name string | Hao Jin | |
Wei Wei | |||
Pei Zhao | |||
Jianwei Li | |||
Qilong Sun | |||
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In-plane heterostructures of Sb/Bi with high carrier mobility | Q48787519 | ||
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Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe2. | Q51065384 | ||
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Controllable growth and transfer of monolayer MoS2 on Au foils and its potential application in hydrogen evolution reaction. | Q53449437 | ||
Polarity-reversed robust carrier mobility in monolayer MoS₂ nanoribbons. | Q53579478 | ||
Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain | Q58485251 | ||
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Accurate and simple analytic representation of the electron-gas correlation energy | Q26778422 | ||
Strain induced topological phase transitions in monolayer honeycomb structures of group-V binary compounds | Q27303914 | ||
Ab initio modeling of quantum transport properties of molecular electronic devices | Q27350176 | ||
Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitions | Q34042953 | ||
Single-layer MoS2 transistors | Q34161525 | ||
Screened hybrid density functionals applied to solids. | Q34521807 | ||
Plasmonic hot electron enhanced MoS2 photocatalysis in hydrogen evolution | Q35561581 | ||
Two-dimensional antimonene single crystals grown by van der Waals epitaxy. | Q37423739 | ||
Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator | Q38688999 | ||
Single-layer MoS2 phototransistors. | Q39676114 | ||
P433 | issue | 40 | |
P407 | language of work or name | English | Q1860 |
P304 | page(s) | 27233-27239 | |
P577 | publication date | 2017-10-09 | |
P1433 | published in | Physical Chemistry Chemical Physics | Q3018671 |
P1476 | title | Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility | |
P478 | volume | 19 |