Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility

scientific article published on 9 October 2017

Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility is …
instance of (P31):
scholarly articleQ13442814

External links are
P356DOI10.1039/C7CP05201D
P8608Fatcat IDrelease_6kyk2pk3xfd2vkybdb7a2e4cju
P698PubMed publication ID28990022

P50authorYing DaiQ110126175
Baibiao HuangQ110142029
P2093author name stringHao Jin
Wei Wei
Pei Zhao
Jianwei Li
Qilong Sun
P2860cites workIntrinsic electronic transport properties of high-quality monolayer and bilayer MoS2.Q43446527
Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties.Q46027845
Engineering the electronic and optoelectronic properties of InX (X = S, Se, Te) monolayers via strain.Q48048670
High-mobility anisotropic transport in few-layer γ-B28 filmsQ48052709
In-plane heterostructures of Sb/Bi with high carrier mobilityQ48787519
Engineering Electronic Structure of a Two-Dimensional Topological Insulator Bi(111) Bilayer on Sb Nanofilms by Quantum Confinement EffectQ50428744
Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe2.Q51065384
Photogalvanic effect in monolayer black phosphorus.Q51678131
Nonlinear spin current and magnetoresistance of molecular tunnel junctions.Q53004198
Controllable growth and transfer of monolayer MoS2 on Au foils and its potential application in hydrogen evolution reaction.Q53449437
Polarity-reversed robust carrier mobility in monolayer MoS₂ nanoribbons.Q53579478
Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strainQ58485251
Generalized Gradient Approximation Made SimpleQ25938998
Projector augmented-wave methodQ26778419
Accurate and simple analytic representation of the electron-gas correlation energyQ26778422
Strain induced topological phase transitions in monolayer honeycomb structures of group-V binary compoundsQ27303914
Ab initio modeling of quantum transport properties of molecular electronic devicesQ27350176
Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitionsQ34042953
Single-layer MoS2 transistorsQ34161525
Screened hybrid density functionals applied to solids.Q34521807
Plasmonic hot electron enhanced MoS2 photocatalysis in hydrogen evolutionQ35561581
Two-dimensional antimonene single crystals grown by van der Waals epitaxy.Q37423739
Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological InsulatorQ38688999
Single-layer MoS2 phototransistors.Q39676114
P433issue40
P407language of work or nameEnglishQ1860
P304page(s)27233-27239
P577publication date2017-10-09
P1433published inPhysical Chemistry Chemical PhysicsQ3018671
P1476titleGiant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility
P478volume19

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cites work (P2860)
Q92031818Photogalvanic Effect in Nitrogen-Doped Monolayer MoS2 from First Principles
Q78946411Two-Dimensional Pnictogen for Field-Effect Transistors