| P50 | author | Shiwei Wu | Q39050712 |
| | Lain-Jong Li | Q46168666 |
| | Wei Ji | Q48331098 |
| | Di Huang | Q64176756 |
| P2093 | author name string | Shuai Zhang | |
| | Ming-Yang Li | |
| | Chen-Guang Wang | |
| P2860 | cites work | From ultrasoft pseudopotentials to the projector augmented-wave method | Q21708488 |
| | Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set | Q26778473 |
| | Three-fold rotational defects in two-dimensional transition metal dichalcogenides | Q30639339 |
| | Single-layer MoS2 transistors | Q34161525 |
| | Optical generation of excitonic valley coherence in monolayer WSe2. | Q34363204 |
| | Exploring atomic defects in molybdenum disulphide monolayers | Q34463595 |
| | Near-unity photoluminescence quantum yield in MoS₂. | Q35854343 |
| | Observation of intervalley quantum interference in epitaxial monolayer tungsten diselenide. | Q36059587 |
| | A cryogen-free low temperature scanning tunneling microscope capable of inelastic electron tunneling spectroscopy. | Q36066465 |
| | Optically initialized robust valley-polarized holes in monolayer WSe2. | Q36360959 |
| | Polycrystalline graphene and other two-dimensional materials | Q38242755 |
| | Gap States at Low-Angle Grain Boundaries in Monolayer Tungsten Diselenide | Q38872253 |
| | Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide. | Q41875896 |
| | Intrinsic structural defects in monolayer molybdenum disulfide | Q44251783 |
| | Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor | Q46118577 |
| | Doping against the native propensity of MoS2: degenerate hole doping by cation substitution | Q46193260 |
| | High-performance single layered WSe₂ p-FETs with chemically doped contacts | Q46423780 |
| | Single quantum emitters in monolayer semiconductors | Q48192344 |
| | Local Spectroscopic Characterization of Spin and Layer Polarization in WSe_{2}. | Q48648005 |
| | NANOELECTRONICS. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. | Q50873872 |
| | Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus. | Q51556330 |
| | Experimental Evidence for Dark Excitons in Monolayer WSe_{2}. | Q51579949 |
| | Long-Lived Hole Spin/Valley Polarization Probed by Kerr Rotation in Monolayer WSe2. | Q53052288 |
| | Phonon-limited mobility inn-type single-layer MoS2from first principles | Q55084866 |
| | Spin and pseudospins in layered transition metal dichalcogenides | Q56607726 |
| | Solid-state single-photon emitters | Q56671756 |
| | Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications | Q57759808 |
| | Optically active quantum dots in monolayer WSe2 | Q59309509 |
| P433 | issue | 4 | |
| P407 | language of work or name | English | Q1860 |
| P304 | page(s) | 046101 | |
| P577 | publication date | 2017-07-25 | |
| P1433 | published in | Physical Review Letters | Q2018386 |
| P1476 | title | Defect Structure of Localized Excitons in a WSe_{2} Monolayer | |
| P478 | volume | 119 | |