| P50 | author | Liangbo Liang | Q51074441 |
| | William M Parkin | Q59529858 |
| | Adrian Balan | Q59658663 |
| P2093 | author name string | Julio A Rodríguez-Manzo | |
| | Vincent Meunier | |
| | A T Charlie Johnson | |
| | Carl H Naylor | |
| | Marija Drndić | |
| | Paul Masih Das | |
| | Michael Lamparski | |
| P2860 | cites work | Atomically Thin MoS 2 : A New Direct-Gap Semiconductor | Q21706555 |
| | Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set | Q26778418 |
| | Sub-10 nm device fabrication in a transmission electron microscope | Q33282275 |
| | Electronics and optoelectronics of two-dimensional transition metal dichalcogenides | Q34034271 |
| | Emerging photoluminescence in monolayer MoS2. | Q34104018 |
| | Single-layer MoS2 transistors | Q34161525 |
| | Synthesis of large-area MoS2 atomic layers with chemical vapor deposition | Q34265095 |
| | Electroluminescence in single layer MoS2. | Q34334224 |
| | Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2. | Q34419707 |
| | Exploring atomic defects in molybdenum disulphide monolayers | Q34463595 |
| | First-principles Raman spectra of MoS2, WS2 and their heterostructures. | Q35141931 |
| | Atomic healing of defects in transition metal dichalcogenides. | Q35617547 |
| | Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus | Q35625406 |
| | Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides | Q38183128 |
| | Integrated circuits and logic operations based on single-layer MoS2. | Q39688263 |
| | Integrated circuits based on bilayer MoS₂ transistors | Q40054196 |
| | Baseline correction using adaptive iteratively reweighted penalized least squares | Q42658100 |
| | Intrinsic structural defects in monolayer molybdenum disulfide | Q44251783 |
| | Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers | Q46120721 |
| | Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations. | Q50916550 |
| | Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2. | Q51252972 |
| | Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations. | Q53238284 |
| | Probing the interlayer coupling of twisted bilayer MoS2 using photoluminescence spectroscopy. | Q53461331 |
| | Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers. | Q53464410 |
| | Hopping transport through defect-induced localized states in molybdenum disulphide. | Q54711242 |
| | Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma | Q57162829 |
| | Accurate Measurement of Electron Beam Induced Displacement Cross Sections for Single-Layer Graphene | Q64031109 |
| | Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping | Q64031125 |
| | Anomalous lattice vibrations of single- and few-layer MoS2 | Q84064602 |
| | Defect-dominated doping and contact resistance in MoS2 | Q87208958 |
| | DNA base detection using a single-layer MoS2 | Q87372635 |
| P433 | issue | 4 | |
| P407 | language of work or name | English | Q1860 |
| P304 | page(s) | 4134-4142 | |
| P577 | publication date | 2016-03-25 | |
| P1433 | published in | ACS Nano | Q2819067 |
| P1476 | title | Raman Shifts in Electron-Irradiated Monolayer MoS2 | |
| P478 | volume | 10 | |