| scholarly article | Q13442814 |
| P50 | author | Zhong Lin Wang | Q197808 |
| P2093 | author name string | Fei Xue | |
| Jian Chen | |||
| Jingbin Liu | |||
| Longfei Wang | |||
| Libo Chen | |||
| Junyi Zhai | |||
| Yaokun Pang | |||
| Mengxiao Chen | |||
| Guoyun Gao | |||
| Xiaonian Yang | |||
| P2860 | cites work | Atomically Thin MoS 2 : A New Direct-Gap Semiconductor | Q21706555 |
| Single-layer MoS2 transistors | Q34161525 | ||
| Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes. | Q34306136 | ||
| Taxel-addressable matrix of vertical-nanowire piezotronic transistors for active and adaptive tactile imaging | Q34341279 | ||
| Ultrasensitive photodetectors based on monolayer MoS2 | Q34349514 | ||
| Few-layer MoS2: a promising layered semiconductor | Q34411655 | ||
| Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics | Q34443646 | ||
| Photodiode-like behavior and excellent photoresponse of vertical Si/monolayer MoS2 heterostructures | Q34574062 | ||
| Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials | Q34598320 | ||
| Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions | Q35114525 | ||
| Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide | Q35247097 | ||
| Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics | Q35816657 | ||
| Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide | Q35864981 | ||
| Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode | Q37318173 | ||
| Electronics based on two-dimensional materials | Q38257066 | ||
| Piezotronic effect on ZnO nanowire film based temperature sensor | Q39216770 | ||
| Chemical vapor sensing with monolayer MoS2. | Q39481200 | ||
| Single-layer MoS2 phototransistors. | Q39676114 | ||
| Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid Structure | Q40179795 | ||
| Flexible piezotronic strain sensor. | Q43667373 | ||
| Piezotronic effect in flexible thin-film based devices | Q45188536 | ||
| Observation of piezoelectricity in free-standing monolayer MoS₂. | Q46050219 | ||
| Enhanced performance of flexible ZnO nanowire based room-temperature oxygen sensors by piezotronic effect | Q46352927 | ||
| Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures | Q46688005 | ||
| High-performance chemical sensing using Schottky-contacted chemical vapor deposition grown monolayer MoS2 transistors | Q46903474 | ||
| Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. | Q48220957 | ||
| NANOELECTRONICS. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. | Q50873872 | ||
| Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. | Q50876595 | ||
| Magnetic-Induced Luminescence from Flexible Composite Laminates by Coupling Magnetic Field to Piezophotonic Effect. | Q50958526 | ||
| Piezo-Phototronic Enhanced UV Sensing Based on a Nanowire Photodetector Array. | Q51669038 | ||
| Enhancing Light Emission of ZnO-Nanofilm/Si-Micropillar Heterostructure Arrays by Piezo-Phototronic Effect. | Q53201562 | ||
| P433 | issue | 17 | |
| P407 | language of work or name | English | Q1860 |
| P304 | page(s) | 3391-3398 | |
| P577 | publication date | 2016-03-03 | |
| P1433 | published in | Advanced Materials | Q1085159 |
| P1476 | title | p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect. | |
| P478 | volume | 28 |
| Q38744955 | Addressable and Color-Tunable Piezophotonic Light-Emitting Stripes |
| Q41565539 | Diverse Functionalities of Vertically Stacked Graphene/Single layer n-MoS2/SiO2/p-GaN Heterostructures. |
| Q47943275 | Flexible Photodetectors Based on Novel Functional Materials |
| Q42317192 | High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors. |
| Q51111397 | Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2. |
| Q48273385 | Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature. |
| Q57344058 | Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene |
| Q91700298 | UV-Visible Photodetector Based on I-type Heterostructure of ZnO-QDs/Monolayer MoS2 |
| Q41701292 | Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction |
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