Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

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Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes is …
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scholarly articleQ13442814

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P356DOI10.1063/1.1480877
P5875ResearchGate publication ID234844754

P50authorPhaedon AvourisQ194102
Vincent DeryckeQ37837507
Richard MartelQ54152392
P2093author name stringJ. Appenzeller
S. J. Wind
P2860cites workAmbipolar Electrical Transport in Semiconducting Single-Wall Carbon NanotubesQ27339608
Crystalline Ropes of Metallic Carbon NanotubesQ36802824
Logic circuits with carbon nanotube transistors.Q39581511
Single- and multi-wall carbon nanotube field-effect transistorsQ54228824
Room-temperature transistor based on a single carbon nanotubeQ54228905
P433issue20
P407language of work or nameEnglishQ1860
P921main subjectcarbon nanotubeQ1778729
field-effect transistorQ176097
P304page(s)3817-3819
P577publication date2002-05-20
P1433published inApplied Physics LettersQ621615
P1476titleVertical scaling of carbon nanotube field-effect transistors using top gate electrodes
P478volume80

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