scholarly article | Q13442814 |
P356 | DOI | 10.1038/NNANO.2010.95 |
P698 | PubMed publication ID | 20495552 |
P50 | author | Michelle Simmons | Q16885683 |
Mark Friesen | Q59418213 | ||
P2093 | author name string | S Mahapatra | |
F A Zwanenburg | |||
M A Eriksson | |||
Martin Fuechsle | |||
P2860 | cites work | Ge/Si nanowire heterostructures as high-performance field-effect transistors | Q28242211 |
Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon | Q33397023 | ||
The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures | Q33684664 | ||
Single-shot read-out of an individual electron spin in a quantum dot. | Q34335272 | ||
Gate-defined quantum dots in intrinsic silicon | Q36848914 | ||
Silicon device scaling to the sub-10-nm regime. | Q51565799 | ||
A silicon-based nuclear spin quantum computer | Q56156227 | ||
Quantum computation with quantum dots | Q56885206 | ||
Valley splitting in strained silicon quantum wells | Q57369857 | ||
Realization of Atomically Controlled Dopant Devices in Silicon | Q57387159 | ||
Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot | Q57404255 | ||
Dephasing of Si spin qubits due to charge noise | Q59422107 | ||
Theory of nuclear-induced spectral diffusion: Spin decoherence of phosphorus donors in Si and GaAs quantum dots | Q59422365 | ||
Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots | Q59429751 | ||
Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures | Q59434789 | ||
Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot | Q59449316 | ||
Observation of the single-electron regime in a highly tunable silicon quantum dot | Q59454344 | ||
Phosphine Dissociation on the Si(001) Surface | Q60474359 | ||
Charge-based quantum computing using single donors in semiconductors | Q62098360 | ||
Pauli-spin-blockade transport through a silicon double quantum dot | Q62117393 | ||
Electronic structure models of phosphorusδ-doped silicon | Q62590055 | ||
Cotunneling spectroscopy in few-electron quantum dots | Q81374860 | ||
Spin states of the first four holes in a silicon nanowire quantum dot | Q83372024 | ||
Single-donor ionization energies in a nanoscale CMOS channel | Q84992682 | ||
P433 | issue | 7 | |
P407 | language of work or name | English | Q1860 |
P921 | main subject | silicon | Q670 |
spectroscopy | Q483666 | ||
quantum dot | Q1133068 | ||
P304 | page(s) | 502-505 | |
P577 | publication date | 2010-05-23 | |
P1433 | published in | Nature Nanotechnology | Q920399 |
P1476 | title | Spectroscopy of few-electron single-crystal silicon quantum dots | |
P478 | volume | 5 |
Q51619937 | A Single-Material Logical Junction Based on 2D Crystal PdS2. |
Q39591471 | A kilobyte rewritable atomic memory. |
Q38669054 | Ab initio calculation of energy levels for phosphorus donors in silicon |
Q34601637 | Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon |
Q34152488 | Ab initio electronic properties of dual phosphorus monolayers in silicon |
Q53511977 | Bottom-up superconducting and Josephson junction devices inside a group-IV semiconductor. |
Q37195807 | Characterizing Si:P quantum dot qubits with spin resonance techniques |
Q57368803 | Coherent electron transport by adiabatic passage in an imperfect donor chain |
Q39006086 | Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements |
Q34146204 | Detecting excitation and magnetization of individual dopants in a semiconductor. |
Q36043506 | Diels-Alder attachment of a planar organic molecule to a dangling bond dimer on a hydrogenated semiconductor surface. |
Q57387085 | Disentangling phonon and impurity interactions in δ-doped Si(001) |
Q40994403 | Distinguishing Lead and Molecule States in Graphene-Based Single-Electron Transistors |
Q57387105 | Effective mass theory of monolayerδdoping in the high-density limit |
Q51026883 | Electronic spin storage in an electrically readable nuclear spin memory with a lifetime >100 seconds. |
Q57387099 | Electronic structure of phosphorus and arsenicδ-doped germanium |
Q57368476 | Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers |
Q64073425 | Electronic transport in planar atomic-scale structures measured by two-probe scanning tunneling spectroscopy |
Q59053439 | Embracing the quantum limit in silicon computing |
Q90963331 | Inorganic semiconductor biointerfaces |
Q33747087 | Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application. |
Q30426656 | Level anticrossing of impurity states in semiconductor nanocrystals |
Q51511054 | Lifetime-enhanced transport in silicon due to spin and valley blockade. |
Q38259258 | Nanoparticle characterization based on STM and STS. |
Q34245138 | Ohm's law survives to the atomic scale |
Q57387077 | Quantum dot spectroscopy using a single phosphorus donor |
Q48662456 | Realization of a quantum Hamiltonian Boolean logic gate on the Si(001):H surface |
Q48006669 | Scalable Synthesis of 2D Si Nanosheets |
Q43544982 | Silicon Nanocrystals with pH-Sensitive Tunable Light Emission from Violet to Blue-Green |
Q36072376 | Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C. |
Q58699665 | Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities |
Q51582678 | Spin-lattice relaxation times of single donors and donor clusters in silicon. |
Q57387113 | Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:Pδlayers |
Q84353252 | The many aspects of quantum dots |
Q83462809 | Transistors arrive at the atomic limit |
Q36099963 | Tunneling spectroscopy of close-spaced dangling-bond pairs in Si(001):H. |
Search more.