| scholarly article | Q13442814 |
| P356 | DOI | 10.1039/C7TC00266A |
| P2093 | author name string | Qi Chen | |
| Yuan Huang | |||
| Huanping Zhou | |||
| Ziqi Xu | |||
| Guanhaojie Zheng | |||
| Zonghao Liu | |||
| P2860 | cites work | Nanoionics-based resistive switching memories | Q28255475 |
| Solvent engineering for high-performance inorganic-organic hybrid perovskite solar cells | Q34428036 | ||
| The optoelectronic role of chlorine in CH3NH3PbI3(Cl)-based perovskite solar cells | Q35813599 | ||
| Hysteresis phenomena in perovskite solar cells: the many and varied effects of ionic accumulation | Q36247126 | ||
| Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance | Q36903169 | ||
| Cesium-containing triple cation perovskite solar cells: improved stability, reproducibility and high efficiency | Q37074035 | ||
| Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching | Q38414434 | ||
| Atomistic origins of high-performance in hybrid halide perovskite solar cells | Q39656629 | ||
| Flexible Hybrid Organic-Inorganic Perovskite Memory | Q39839863 | ||
| Programmable polymer thin film and non-volatile memory device | Q45165344 | ||
| Single Crystal Formamidinium Lead Iodide (FAPbI3): Insight into the Structural, Optical, and Electrical Properties. | Q46000094 | ||
| Parameters Affecting I-V Hysteresis of CH3NH3PbI3 Perovskite Solar Cells: Effects of Perovskite Crystal Size and Mesoporous TiO2 Layer | Q47368429 | ||
| High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers. | Q50689882 | ||
| Resistive Switching Behavior in Organic-Inorganic Hybrid CH3 NH3 PbI3-x Clx Perovskite for Resistive Random Access Memory Devices. | Q50711798 | ||
| The Additive Coordination Effect on Hybrids Perovskite Crystallization and High-Performance Solar Cell. | Q51144570 | ||
| Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. | Q51957923 | ||
| Highly Reproducible Perovskite Solar Cells with Average Efficiency of 18.3% and Best Efficiency of 19.7% Fabricated via Lewis Base Adduct of Lead(II) Iodide. | Q53194794 | ||
| Giant switchable photovoltaic effect in organometal trihalide perovskite devices. | Q53366357 | ||
| Solvent annealing of perovskite-induced crystal growth for photovoltaic-device efficiency enhancement. | Q53464377 | ||
| P433 | issue | 23 | |
| P921 | main subject | perovskite | Q409787 |
| perovskite structure | Q3036449 | ||
| P304 | page(s) | 5810-5817 | |
| P577 | publication date | 2017-01-01 | |
| P1433 | published in | Journal of Materials Chemistry C | Q18720052 |
| P1476 | title | To probe the performance of perovskite memory devices: defects property and hysteresis | |
| P478 | volume | 5 |
| Q47648306 | A general approach for nanoparticle composite transport materials toward efficient perovskite solar cells | cites work | P2860 |
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