FeInS Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field-Effect Transistors

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FeInS Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field-Effect Transistors is …
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P356DOI10.1002/ADVS.201800068
P932PMC publication ID6051185
P698PubMed publication ID30027040

P50authorHyoyoung LeeQ38639432
P2093author name stringHyunjung Kim
Eunhee Hwang
Sora Bak
Yunhee Cho
Yeseul Hong
Anand P Tiwari
Heemin Hwang
P2860cites workOxide Semiconductor Thin-Film Transistors: A Review of Recent AdvancesQ29543980
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High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistorsQ39038157
Dependence of carrier mobility on nanocrystal size and ligand length in PbSe nanocrystal solids.Q43425411
Influence of silver doping on electron transport in thin films of PbSe nanocrystalsQ44508642
Determination of band structure parameters and the quasi-particle gap of CdSe quantum dots by cyclic voltammetry.Q45995778
PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1).Q46076121
Size-dependent electrochemical behavior of thiol-capped CdTe nanocrystals in aqueous solutionQ47329456
Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion LayerQ48131304
PbSe nanocrystal solids for n- and p-channel thin film field-effect transistors.Q51342511
Electronic Tuning of 2D MoS2 through Surface Functionalization.Q51718190
Solution-Processed Transistors Using Colloidal Nanocrystals with Composition-Matched Molecular "Solders": Approaching Single Crystal Mobility.Q51805925
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic ApplicationsQ57348806
Thiocyanate-Capped PbS Nanocubes: Ambipolar Transport Enables Quantum Dot Based Circuits on a Flexible SubstrateQ57350261
Low Driving Voltage and High Mobility Ambipolar Field-Effect Transistors with PbS Colloidal NanocrystalsQ57730200
Electronic Impurity Doping in CdSe NanocrystalsQ62123067
Role of fermi-level pinning in nanotube schottky diodesQ74320989
Engineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuitsQ85723284
Ambipolar phosphorene field effect transistorQ85828923
Length-Sorted, Large-Diameter, Polyfluorene-Wrapped Semiconducting Single-Walled Carbon Nanotubes for High-Density, Short-Channel TransistorsQ87125434
P433issue7
P407language of work or nameEnglishQ1860
P921main subjectfield-effect transistorQ176097
P304page(s)1800068
P577publication date2018-03-27
P1433published inAdvanced ScienceQ25340053
P1476titleFeIn2S4 Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field-Effect Transistors
P478volume5