Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography

Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography is …
instance of (P31):
scholarly articleQ13442814

External links are
P356DOI10.1063/1.4962380

P50authorMeng GuQ57955961
P2093author name stringYang He
Chongmin Wang
Zhaofeng Gan
Jinkyoung Yoo
Daniel E. Perea
David J. Smith
Robert J. Colby
Martha R. McCartney
Scott X. Mao
S. T. Picraux
Josh E. Barker
P2860cites workSilicon nanowires: electron holography studies of doped p-n junctions and biased Schottky barriersQ34605714
Vertical nanowire heterojunction devices based on a clean Si/Ge interfaceQ39330962
Spatially resolved correlation of active and total doping concentrations in VLS grown nanowires.Q45164516
High-resolution detection of Au catalyst atoms in Si nanowiresQ47431932
Electron holography for fields in solids: problems and progressQ48945287
Realization of a silicon nanowire vertical surround-gate field-effect transistor.Q51090520
Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires.Q51323849
Measurement of active dopant distribution and diffusion in individual silicon nanowires.Q51717144
Doping limits of grown in situ doped silicon nanowires using phosphine.Q52695702
Determination of polarization-fields across polytype interfaces in InAs nanopillars.Q54302630
Electron Holography: Phase Imaging with Nanometer ResolutionQ56523199
Determination of mean inner potential of germanium using off-axis electron holographyQ57389182
Growth of nanowire superlattice structures for nanoscale photonics and electronicsQ59065028
P433issue10
P921main subjectholographyQ527628
nanowireQ631739
electrical propertiesQ110583288
P304page(s)104301
P577publication date2016-09-13
P1433published inJournal of Applied PhysicsQ1987941
P1476titleCharacterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography
P478volume120

Reverse relations

Q62616493Quantitative measurement of nanoscale electrostatic potentials and charges using off-axis electron holography: Developments and opportunitiescites workP2860