| scholarly article | Q13442814 |
| P356 | DOI | 10.1080/23746149.2017.1314192 |
| P2093 | author name string | Arindam Ghosh | |
| Tathagata Paul | |||
| Paritosh Karnatak | |||
| Saurav Islam | |||
| P2860 | cites work | 1 f noise and other slow, nonexponential kinetics in condensed matter | Q21698183 |
| Atomically Thin MoS 2 : A New Direct-Gap Semiconductor | Q21706555 | ||
| Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2 | Q21708350 | ||
| p -type Bi 2 Se 3 for topological insulator and low-temperature thermoelectric applications | Q21708374 | ||
| Electric Field Effect in Atomically Thin Carbon Films | Q26778398 | ||
| Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator | Q27339708 | ||
| Low-frequency fluctuations in solids: 1 f noise | Q27345416 | ||
| The electronic properties of graphene | Q27350073 | ||
| Colloquium : Topological insulators | Q27350287 | ||
| Experimental observation of the quantum Hall effect and Berry's phase in graphene | Q28032457 | ||
| Black phosphorus field-effect transistors | Q28308156 | ||
| Low-frequency 1/f noise in graphene devices. | Q30352581 | ||
| Effect of band-alignment operation on carrier transport in Bi2Se3 topological insulator | Q30431655 | ||
| Electronics and optoelectronics of two-dimensional transition metal dichalcogenides | Q34034271 | ||
| Boron nitride substrates for high-quality graphene electronics. | Q34132620 | ||
| Single-layer MoS2 transistors | Q34161525 | ||
| Control of valley polarization in monolayer MoS2 by optical helicity. | Q34282213 | ||
| Ultrasensitive photodetectors based on monolayer MoS2 | Q34349514 | ||
| Optical generation of excitonic valley coherence in monolayer WSe2. | Q34363204 | ||
| One-dimensional electrical contact to a two-dimensional material | Q34381846 | ||
| Negative local resistance caused by viscous electron backflow in graphene. | Q34515530 | ||
| Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters | Q34598245 | ||
| Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials | Q34598320 | ||
| Large-area synthesis of high-quality and uniform graphene films on copper foils | Q34979745 | ||
| Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions | Q35114525 | ||
| Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures | Q35566504 | ||
| Current crowding mediated large contact noise in graphene field-effect transistors. | Q37500961 | ||
| Van der Waals heterostructures | Q38124232 | ||
| Solar-energy conversion and light emission in an atomic monolayer p-n diode | Q38194404 | ||
| Few-layer black phosphorus field-effect transistors with reduced current fluctuation | Q39103344 | ||
| Electrical transport properties of single-layer WS2. | Q39152768 | ||
| Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors | Q40100617 | ||
| Tunability of 1/f Noise at Multiple Dirac Cones in hBN Encapsulated Graphene Devices | Q40109873 | ||
| Valley carrier dynamics in monolayer molybdenum disulfide from helicity-resolved ultrafast pump-probe spectroscopy. | Q43534624 | ||
| Nanoscale Joule heating, Peltier cooling and current crowding at graphene-metal contacts. | Q44457914 | ||
| Low-frequency current fluctuations in "graphene-like" exfoliated thin-films of bismuth selenide topological insulators | Q44460981 | ||
| Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures | Q44468072 | ||
| Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation | Q44515144 | ||
| Low-frequency noise in bilayer MoS(2) transistor | Q44663828 | ||
| MoS2 transistors with 1-nanometer gate lengths | Q45070740 | ||
| Reducing contact resistance in graphene devices through contact area patterning. | Q46000690 | ||
| Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene. | Q46081291 | ||
| Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers | Q46120721 | ||
| Ultrafast generation of pseudo-magnetic field for valley excitons in WSe₂ monolayers. | Q46147352 | ||
| Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. | Q46216920 | ||
| Strong light-matter interactions in heterostructures of atomically thin films. | Q46621052 | ||
| Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures | Q46688005 | ||
| Electronic transport in polycrystalline graphene | Q47606661 | ||
| Intrinsic magnetism of grain boundaries in two-dimensional metal dichalcogenides | Q47617193 | ||
| Atomically thin p-n junctions with van der Waals heterointerfaces | Q48282935 | ||
| Nanoscale Direct Mapping of Noise Source Activities on Graphene Domains | Q48908641 | ||
| Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. | Q50876595 | ||
| Valley-polarized exciton dynamics in a 2D semiconductor heterostructure. | Q51496032 | ||
| Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature. | Q51512790 | ||
| Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors. | Q51547805 | ||
| Magnitude and Origin of Electrical Noise at Individual Grain Boundaries in Graphene. | Q51619252 | ||
| High-Performance Sensors Based on Resistance Fluctuations of Single-Layer-Graphene Transistors. | Q51797944 | ||
| Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms. | Q53082018 | ||
| Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices. | Q53595593 | ||
| Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide. | Q53603268 | ||
| Bulk-Induced 1/f Noise at the Surface of Three-Dimensional Topological Insulators. | Q53810129 | ||
| Graphene nano-ribbon electronics | Q56962355 | ||
| Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface | Q57258674 | ||
| Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:Pδlayers | Q57387113 | ||
| Charge Noise in Graphene Transistors | Q57938439 | ||
| Magnetic Cr doping ofBi2Se3: Evidence for divalent Cr from x-ray spectroscopy | Q58166989 | ||
| P275 | copyright license | Creative Commons Attribution 4.0 International | Q20007257 |
| P6216 | copyright status | copyrighted | Q50423863 |
| P433 | issue | 2 | |
| P304 | page(s) | 428-449 | |
| P577 | publication date | 2017-03-04 | |
| P1433 | published in | Advances in Physics: X | Q50817208 |
| P1476 | title | 1 / f noise in van der Waals materials and hybrids | |
| P478 | volume | 2 |
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