Controlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowires

scientific article published in Nature

Controlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowires is …
instance of (P31):
scholarly articleQ13442814

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P6179Dimensions Publication ID1029476190
P356DOI10.1038/19941

P2093author name stringPeidong Yang
Min Ouyang
Jiangtao Hu
Charles M. Lieber
P2860cites workCarbon nanotube quantum resistorsQ28273462
A laser ablation method for the synthesis of crystalline semiconductor nanowiresQ32155578
Large-scale synthesis of carbon nanotubesQ54152401
Room-temperature transistor based on a single carbon nanotubeQ54228905
Nanotubes as nanoprobes in scanning probe microscopyQ56639743
A single-electron transistor made from a cadmium selenide nanocrystalQ59059580
Single-electron transfer in metallic nanostructuresQ59089305
Nanotube NanodeviceQ62474051
Barrier characteristics of Schottky diodes as determined from I-V-T measurementsQ62557662
Pure carbon nanoscale devices: Nanotube heterojunctionsQ74569259
P433issue6731
P407language of work or nameEnglishQ1860
P921main subjectsiliconQ670
nanowireQ631739
carbon nanotubeQ1778729
electrical propertiesQ110583288
P304page(s)48-51
P577publication date1999-05-01
P1433published inNatureQ180445
P1476titleControlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowires
P478volume399

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