Addressable electron spin resonance using donors and donor molecules in silicon

scientific article published on 13 July 2018

Addressable electron spin resonance using donors and donor molecules in silicon is …
instance of (P31):
scholarly articleQ13442814

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P818arXiv ID1807.10290
P356DOI10.1126/SCIADV.AAQ1459
P932PMC publication ID6044739
P698PubMed publication ID30027114

P50authorMichelle SimmonsQ16885683
Samuel HileQ51548474
Matthew A BroomeQ57434845
Rajib RahmanQ57465959
Samuel K GormanQ59485116
Matthew G HouseQ59485151
Joris G KeizerQ90354540
P2093author name stringYu Wang
Lukas Fricke
Eldad Peretz
Chin Yi Chen
P2860cites workThe use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructuresQ33684664
Single-shot read-out of an individual electron spin in a quantum dot.Q34335272
Electrically controlling single-spin qubits in a continuous microwave fieldQ36268187
Characterizing Si:P quantum dot qubits with spin resonance techniquesQ37195807
Valley-enhanced fast relaxation of gate-controlled donor qubits in siliconQ38379634
Atomically engineered electron spin lifetimes of 30 s in siliconQ44718566
Nanoscale broadband transmission lines for spin qubit control.Q45398754
An addressable quantum dot qubit with fault-tolerant control-fidelity.Q48261705
The return of the frequency sweep: designing adiabatic pulses for contemporary NMR.Q48691421
High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in SiliconQ50004382
High precision quantum control of single donor spins in silicon.Q50675126
Stark tuning of donor electron spins in silicon.Q51095703
Spatial metrology of dopants in silicon with exact lattice site precision.Q51301214
High-fidelity readout and control of a nuclear spin qubit in silicon.Q51532063
Two-electron spin correlations in precision placed donors in silicon.Q51556976
High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D(-) Charge State.Q51575777
Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking.Q51581042
Spin-lattice relaxation times of single donors and donor clusters in silicon.Q51582678
Driven coherent oscillations of a single electron spin in a quantum dot.Q51584278
Spin blockade and exchange in Coulomb-confined silicon double quantum dots.Q51590239
Spin readout and addressability of phosphorus-donor clusters in silicon.Q51596209
A single-atom electron spin qubit in silicon.Q51600462
Mapping donor electron wave function deformations at a sub-Bohr orbit resolution.Q53495486
Exchange in silicon-based quantum computer architecture.Q53675108
Fast Nuclear Spin Hyperpolarization of Phosphorus in SiliconQ59432860
Quantum Information Storage for over 180 s Using Donor Spins in a 28Si "Semiconductor Vacuum"Q59476987
Atomically Precise Placement of Single Dopants in SiQ60474374
Theory of the Stark effect for P donors in SiQ81765610
Electron spin coherence exceeding seconds in high-purity siliconQ82792861
Anisotropic stark effect and electric-field noise suppression for phosphorus donor qubits in siliconQ85359181
Theory of one and two donors in siliconQ86949119
P433issue7
P407language of work or nameEnglishQ1860
P304page(s)eaaq1459
P577publication date2018-07-13
P1433published inScience AdvancesQ19881044
P1476titleAddressable electron spin resonance using donors and donor molecules in silicon
P478volume4

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cites work (P2860)
Q90108290Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
Q99555370Controllable freezing of the nuclear spin bath in a single-atom spin qubit

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