Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

article

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport is …
instance of (P31):
scholarly articleQ13442814

External links are
P818arXiv ID1002.4934
P356DOI10.1016/J.TSF.2009.09.152

P2093author name stringE. Gauja
B.C. Johnson
J.C. McCallum
L.H. Willems van Beveren
P2860cites workSingle-shot read-out of an individual electron spin in a quantum dot.Q34335272
Single-spin readout for buried dopant semiconductor qubitsQ59423841
Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistorQ59454346
P433issue9
P921main subjectfield-effect transistorQ176097
P304page(s)2524-2527
P577publication date2010-02-01
P1433published inThin Solid FilmsQ2062139
P1476titleDeep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
P478volume518

Reverse relations

Q30472021Pauli spin blockade in a highly tunable silicon double quantum dotcites workP2860

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