Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor

scientific article published on 07 January 2019

Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor is …
instance of (P31):
scholarly articleQ13442814

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P356DOI10.1038/S41565-018-0338-1
P698PubMed publication ID30617309

P50authorMichelle SimmonsQ16885683
Matthew G HouseQ59485151
P2093author name stringMatthias Koch
Joris G Keizer
Eldad Peretz
Daniel Keith
Prasanna Pakkiam
P2860cites workThe use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructuresQ33684664
A single-atom transistorQ34161441
Ohm's law survives to the atomic scaleQ34245138
Single-shot read-out of an individual electron spin in a quantum dot.Q34335272
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Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architectureQ45374328
Roads towards fault-tolerant universal quantum computation.Q50107564
High-fidelity readout and control of a nuclear spin qubit in silicon.Q51532063
Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers.Q51575621
High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D(-) Charge State.Q51575777
Spin-lattice relaxation times of single donors and donor clusters in silicon.Q51582678
Spin blockade and exchange in Coulomb-confined silicon double quantum dots.Q51590239
Spin readout and addressability of phosphorus-donor clusters in silicon.Q51596209
A single-atom electron spin qubit in silicon.Q51600462
Investigating the surface quality and confinement of Si:P at different growth temperaturesQ57387116
Realization of Atomically Controlled Dopant Devices in SiliconQ57387159
Single-shot readout of an electron spin in siliconQ59064826
Surface code quantum computing with error rates over 1%Q59423752
Surface codes: Towards practical large-scale quantum computationQ59476201
Low resistivity, super-saturation phosphorus-in-silicon monolayer dopingQ60474267
Effect of encapsulation temperature on Si:P δ-doped layersQ60474348
Atomically Precise Placement of Single Dopants in SiQ60474374
On the microscopic origin of the kinetic step bunching instability on vicinal Si()Q62057383
P433issue2
P921main subjectqubitQ378201
P304page(s)137-140
P577publication date2019-01-07
P1433published inNature NanotechnologyQ920399
P1476titleSpin read-out in atomic qubits in an all-epitaxial three-dimensional transistor
P478volume14

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cites work (P2860)
Q90108290Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
Q91106601Picosecond coherent electron motion in a silicon single-electron source
Q91106604Picosecond detection of electron motion
Q103803833Valley interference and spin exchange at the atomic scale in silicon
Q100490661Versatile direct-writing of dopants in a solid state host through recoil implantation

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