| scholarly article | Q13442814 |
| P50 | author | Ke Wang | Q92052934 |
| Yan Liu | Q92527645 | ||
| P2093 | author name string | Wei Zhao | |
| Min Zhang | |||
| Hai Wang | |||
| P2860 | cites work | Electric Field Effect in Atomically Thin Carbon Films | Q26778398 |
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| Layer-dependent band alignment and work function of few-layer phosphorene | Q42950607 | ||
| Contributions of magnetic properties in epitaxial copper-doped ZnO. | Q44000643 | ||
| Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials | Q47229069 | ||
| Effect of Metal Doping and Vacancies on the Thermal Conductivity of Monolayer Molybdenum Diselenide. | Q47565498 | ||
| Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects | Q48093588 | ||
| The Electronic Properties of O-Doped Pure and Sulfur Vacancy-Defect Monolayer WS₂: A First-Principles Study. | Q48134416 | ||
| Ab initio study of adsorption and diffusion of lithium on transition metal dichalcogenide monolayers | Q49244788 | ||
| Tunable Bandgap and Optical Properties of Black Phosphorene Nanotubes | Q49803815 | ||
| Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates | Q58798473 | ||
| Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping | Q64031125 | ||
| Anomalous doping effect in black phosphorene using first-principles calculations | Q85327535 | ||
| A first-principles study on the magnetic properties of nonmetal atom doped phosphorene monolayers | Q85327899 | ||
| The atomic and electronic structure of nitrogen- and boron-doped phosphorene | Q86310512 | ||
| Doping of rhenium disulfide monolayers: a systematic first principles study | Q87362054 | ||
| P304 | page(s) | 993-1001 | |
| P577 | publication date | 2019-05-02 | |
| P1433 | published in | Beilstein Journal of Nanotechnology | Q814756 |
| P1476 | title | Electronic and magnetic properties of doped black phosphorene with concentration dependence | |
| P478 | volume | 10 |
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