| scholarly article | Q13442814 |
| P818 | arXiv ID | 1501.01071 |
| P356 | DOI | 10.1038/SREP21786 |
| P932 | PMC publication ID | 4772071 |
| P698 | PubMed publication ID | 26928583 |
| P5875 | ResearchGate publication ID | 296631267 |
| P50 | author | Zeyuan Ni | Q61826319 |
| P2093 | author name string | Li Yang | |
| Jing Lu | |||
| Ming Lei | |||
| Jinbo Yang | |||
| Junjie Shi | |||
| Yuanyuan Pan | |||
| Zhigang Song | |||
| Meng Ye | |||
| Yangyang Wang | |||
| Ruge Quhe | |||
| Hongxia Zhong | |||
| P2860 | cites work | Excitons and many-electron effects in the optical response of single-walled boron nitride nanotubes | Q83132995 |
| Designing electrical contacts to MoS2 monolayers: a computational study | Q84136756 | ||
| First principles scheme to evaluate band edge positions in potential transition metal oxide photocatalysts and photoelectrodes | Q84791828 | ||
| Toward low-power electronics: tunneling phenomena in transition metal dichalcogenides | Q87040418 | ||
| The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces | Q87502603 | ||
| Valleytronics. The valley Hall effect in MoS₂ transistors | Q88164955 | ||
| Degenerate n-doping of few-layer transition metal dichalcogenides by potassium | Q44930162 | ||
| MoS₂ field-effect transistor for next-generation label-free biosensors | Q46431442 | ||
| Edge nonlinear optics on a MoS₂ atomic monolayer | Q46842856 | ||
| Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform | Q48195756 | ||
| Atomically thin p-n junctions with van der Waals heterointerfaces | Q48282935 | ||
| Quasiparticle energies and band gaps in graphene nanoribbons. | Q50867572 | ||
| Tunable transport gap in phosphorene. | Q51058875 | ||
| Does p-type ohmic contact exist in WSe2-metal interfaces? | Q51606987 | ||
| Electrically switchable chiral light-emitting transistor. | Q53560941 | ||
| The SIESTA method for ab initio order-N materials simulation | Q56866700 | ||
| Excitons in Boron Nitride Nanotubes: Dimensionality Effects | Q57394979 | ||
| Zeeman-type spin splitting controlled by an electric field | Q58897025 | ||
| Renormalization of molecular electronic levels at metal-molecule interfaces | Q79419580 | ||
| Atomically Thin MoS 2 : A New Direct-Gap Semiconductor | Q21706555 | ||
| From ultrasoft pseudopotentials to the projector augmented-wave method | Q21708488 | ||
| Accurate and simple analytic representation of the electron-gas correlation energy | Q26778422 | ||
| Special points for Brillouin-zone integrations | Q26778424 | ||
| Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set | Q26778473 | ||
| Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides | Q27350429 | ||
| Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus | Q27440769 | ||
| Excitonic Effects on the Optical Response of Graphene and Bilayer Graphene | Q27447432 | ||
| Optical Spectrum of MoS 2 : Many-Body Effects and Diversity of Exciton States | Q27450027 | ||
| High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. | Q28244279 | ||
| Emerging photoluminescence in monolayer MoS2. | Q34104018 | ||
| Single-layer MoS2 transistors | Q34161525 | ||
| Control of valley polarization in monolayer MoS2 by optical helicity. | Q34282213 | ||
| Valley polarization in MoS2 monolayers by optical pumping | Q34282219 | ||
| Electroluminescence in single layer MoS2. | Q34334224 | ||
| Ultrasensitive photodetectors based on monolayer MoS2 | Q34349514 | ||
| Highly anisotropic and robust excitons in monolayer black phosphorus | Q35615148 | ||
| Tunable and sizable band gap in silicene by surface adsorption. | Q36395779 | ||
| Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions | Q36750774 | ||
| Chemical vapor sensing with monolayer MoS2. | Q39481200 | ||
| Tuning the electronic and chemical properties of monolayer MoS2 adsorbed on transition metal substrates. | Q39485223 | ||
| Single-layer MoS2 phototransistors. | Q39676114 | ||
| Integrated circuits and logic operations based on single-layer MoS2. | Q39688263 | ||
| Integrated circuits based on bilayer MoS₂ transistors | Q40054196 | ||
| Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2. | Q43446527 | ||
| High performance multilayer MoS2 transistors with scandium contacts | Q44013084 | ||
| P275 | copyright license | Creative Commons Attribution 4.0 International | Q20007257 |
| P6216 | copyright status | copyrighted | Q50423863 |
| P407 | language of work or name | English | Q1860 |
| P304 | page(s) | 21786 | |
| P577 | publication date | 2016-03-01 | |
| P1433 | published in | Scientific Reports | Q2261792 |
| P1476 | title | Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations | |
| P478 | volume | 6 |
| Q47864458 | A General Method for the Chemical Synthesis of Large-Scale, Seamless Transition Metal Dichalcogenide Electronics. |
| Q49994796 | A new insight for ohmic contacts to MoS2: by tuning MoS2 affinity energies but not metal work-functions. |
| Q47620744 | A study on the electronic and interfacial structures of monolayer ReS2-metal contacts |
| Q38638872 | Anisotropic carrier mobility in buckled two-dimensional GaN. |
| Q47686697 | Black phosphorus transistors with van der Waals-type electrical contacts |
| Q58765428 | Carrier Transport Properties of MoS Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation |
| Q50867743 | Controlling the electronic and geometric structures of 2D insertions to realize high performance metal/insertion-MoS2 sandwich interfaces. |
| Q38683370 | Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts. |
| Q51110266 | Designing high performance metal-mMoS2 interfaces by two-dimensional insertions with suitable thickness. |
| Q92095921 | Doping-free complementary WSe2 circuit via van der Waals metal integration |
| Q47995764 | Electrical and optical behaviors of SiC(GeC)/MoS2 heterostructures: a first principles study. |
| Q38638508 | Interfacial properties of borophene contacts with two-dimensional semiconductors |
| Q51306143 | Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions. |
| Q57023550 | Mechanism of Gold-Assisted Exfoliation of Centimeter-Sized Transition-Metal Dichalcogenide Monolayers |
| Q92704808 | Nanotip Contacts for Electric Transport and Field Emission Characterization of Ultrathin MoS2 Flakes |
| Q47898358 | Non-invasively improving the Schottky barriers of metal-MoS2 interfaces: effects of atomic vacancies in a BN buffer layer |
| Q64058028 | Prevention of Hydrogen Damage Using MoS₂ Coating on Iron Surface |
| Q105446978 | The Intricate Love Affairs between MoS 2 and Metallic Substrates |
| Q55012665 | Transport and Field Emission Properties of MoS₂ Bilayers. |
| Q64065235 | Unusual properties and potential applications of strain BN-MS (M = Mo, W) heterostructures |
| Q55395425 | Zero-static power radio-frequency switches based on MoS2 atomristors. |
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