| Q33774459 | A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides |
| Q59072038 | Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions |
| Q59134272 | Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides |
| Q89597450 | Contacts for Molybdenum Disulfide: Interface Chemistry and Thermal Stability |
| Q47174623 | Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function |
| Q64934119 | Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-van der Waals Contacts. |
| Q38683370 | Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts. |
| Q92095921 | Doping-free complementary WSe2 circuit via van der Waals metal integration |
| Q64069235 | Dynamically controllable polarity modulation of MoTe field-effect transistors through ultraviolet light and electrostatic activation |
| Q38638927 | Electrical contacts to two-dimensional semiconductors |
| Q28829109 | Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts |
| Q37111203 | Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors |
| Q89963136 | Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering |
| Q30381921 | Improving resolution in quantum subnanometre-gap tip-enhanced Raman nanoimaging |
| Q36633376 | Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations |
| Q55091419 | Local Conduction in Mo xW1- xSe2: The Role of Stacking Faults, Defects, and Alloying. |
| Q41874143 | Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors |
| Q92814669 | Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors |
| Q37076691 | Polarity control in WSe2 double-gate transistors. |
| Q58010706 | Probing the limits of plasmonic enhancement using a two-dimensional atomic crystal probe |
| Q92735376 | Pulsed laser deposition of single-layer MoS2 on Au(111): from nanosized crystals to large-area films |
| Q62641950 | Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations |
| Q41696789 | Schottky solar cell using few-layered transition metal dichalcogenides toward large-scale fabrication of semitransparent and flexible power generator |
| Q105446978 | The Intricate Love Affairs between MoS 2 and Metallic Substrates |
| Q59096108 | The ambipolar transport behavior of WSe2 transistors and its analogue circuits |
| Q37084740 | Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications |
| Q90371751 | Tunable rectification in a molecular heterojunction with two-dimensional semiconductors |
| Q64253564 | Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides |
| Q64065235 | Unusual properties and potential applications of strain BN-MS (M = Mo, W) heterostructures |
| Q89818922 | Van der Waals interfacial reconstruction in monolayer transition-metal dichalcogenides and gold heterojunctions |
| Q36839799 | Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier |