| P50 | author | Siyuan Zhang | Q38319338 |
| | Christina A Hacker | Q50634625 |
| | Curt A. Richter | Q89963134 |
| P2093 | author name string | Son T Le | |
| P2860 | cites work | Chemical Redox Agents for Organometallic Chemistry | Q28201823 |
| | One-dimensional electrical contact to a two-dimensional material | Q34381846 |
| | Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides. | Q38406760 |
| | P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor | Q38916381 |
| | High performance multilayer MoS2 transistors with scandium contacts | Q44013084 |
| | Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation | Q45391156 |
| | Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect Monolayers | Q46142609 |
| | Controlled doping of large-area trilayer MoS2 with molecular reductants and oxidants. | Q46787690 |
| | Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function | Q47174623 |
| | Contact engineering for 2D materials and devices. | Q52677274 |
| | Two-dimensional transition metal dichalcogenides: interface and defect engineering. | Q53080395 |
| | Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor. | Q53121551 |
| | Controllable, Wide-Ranging n-Doping and p-Doping of Monolayer Group 6 Transition-Metal Disulfides and Diselenides | Q57138168 |
| | Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers | Q57785821 |
| | Ultralow Doping in Organic Semiconductors: Evidence of Trap Filling | Q60222559 |
| | Field-modulated carrier transport in carbon nanotube transistors | Q74773647 |
| | Tunneling versus thermionic emission in one-dimensional semiconductors | Q76398766 |
| | Chloride molecular doping technique on 2D materials: WS2 and MoS2 | Q85770647 |
| | The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces | Q87502603 |
| | Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States | Q88932239 |
| | Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing | Q93121824 |
| P433 | issue | 7 | |
| P577 | publication date | 2019-01-01 | |
| P1433 | published in | Applied Physics Letters | Q621615 |
| P1476 | title | Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering | |
| P478 | volume | 115 | |