Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing

scientific article published on 29 April 2019

Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing is …
instance of (P31):
scholarly articleQ13442814

External links are
P818arXiv ID1904.02189
P356DOI10.1021/ACSAMI.9B01486
P698PubMed publication ID30990006

P50authorArvind BalijepalliQ51324395
Jeffery B KlaudaQ87809850
P2093author name stringSiyuan Zhang
Curt A Richter
Brent A Sperling
Son T Le
Nicholas B Guros
P433issue18
P304page(s)16683-16692
P577publication date2019-04-29
P1433published inACS Applied Materials and InterfacesQ2819060
P1476titleReproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing
P478volume11

Reverse relations

cites work (P2860)
Q89963136Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering
Q90225298Rapid, quantitative therapeutic screening for Alzheimer's enzymes enabled by optimal signal transduction with transistors

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