| P50 | author | Enxiu Wu | Q90935472 |
| | Xiaodong Hu | Q91779357 |
| P2093 | author name string | Jing Zhang | |
| | Jing Liu | |
| | Hao Zhang | |
| | Yuan Xie | |
| | Chongwu Zhou | |
| | Daihua Zhang | |
| P2860 | cites work | Channel length scaling of MoS2 MOSFETs | Q84945935 |
| | Toward low-power electronics: tunneling phenomena in transition metal dichalcogenides | Q87040418 |
| | Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors | Q87337031 |
| | Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode | Q87394581 |
| | The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces | Q87502603 |
| | Two-dimensional flexible nanoelectronics | Q28254068 |
| | Electronics and optoelectronics of two-dimensional transition metal dichalcogenides | Q34034271 |
| | Single-layer MoS2 transistors | Q34161525 |
| | Ultrasensitive photodetectors based on monolayer MoS2 | Q34349514 |
| | Ambipolar MoTe2 transistors and their applications in logic circuits | Q34413231 |
| | Optical properties and band gap of single- and few-layer MoTe2 crystals. | Q34442825 |
| | DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂. | Q34488614 |
| | Superconductivity in Weyl semimetal candidate MoTe2 | Q34517976 |
| | Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors. | Q35608885 |
| | Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition. | Q35755671 |
| | Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode | Q37318173 |
| | The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets | Q38091257 |
| | Solar-energy conversion and light emission in an atomic monolayer p-n diode | Q38194404 |
| | Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides. | Q38406760 |
| | Contact Engineering of Molybdenum Ditelluride Field Effect Transistors through Rapid Thermal Annealing. | Q38641222 |
| | Ultrasensitive Near-Infrared Photodetectors Based on a Graphene-MoTe2-Graphene Vertical van der Waals Heterostructure. | Q38767164 |
| | P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor | Q38916381 |
| | Indirect-to-direct band gap crossover in few-layer MoTe₂. | Q39025999 |
| | Integrated circuits and logic operations based on single-layer MoS2. | Q39688263 |
| | Integrated circuits based on bilayer MoS₂ transistors | Q40054196 |
| | Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction | Q41701292 |
| | Photovoltaic effect in an electrically tunable van der Waals heterojunction | Q42815139 |
| | Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures | Q44468072 |
| | Photoinduced doping in heterostructures of graphene and boron nitride. | Q46687925 |
| | Carrier-Type Modulation and Mobility Improvement of Thin MoTe2. | Q47748771 |
| | Two-dimensional non-volatile programmable p-n junctions. | Q48027315 |
| | Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits. | Q48271273 |
| | Atomically thin p-n junctions with van der Waals heterointerfaces | Q48282935 |
| | Electrostatically tunable lateral MoTe2 p-n junction for use in high-performance optoelectronics. | Q51281755 |
| | Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application. | Q51555280 |
| | Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors. | Q51620416 |
| | A subthermionic tunnel field-effect transistor with an atomically thin channel. | Q51698982 |
| | Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide. | Q53603268 |
| P433 | issue | 5 | |
| P407 | language of work or name | English | Q1860 |
| P921 | main subject | field-effect transistor | Q176097 |
| P304 | page(s) | eaav3430 | |
| P577 | publication date | 2019-05-03 | |
| P1433 | published in | Science Advances | Q19881044 |
| P1476 | title | Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation | |
| P478 | volume | 5 | |