| scholarly article | Q13442814 |
| P50 | author | Muhammad Farooq Khan | Q85639066 |
| Ghulam Dastgeer | Q88172717 | ||
| Jonghwa Eom | Q88172721 | ||
| P2093 | author name string | Amir Muhammad Afzal | |
| Ghazanfar Nazir | |||
| Malik Abdul Rehman | |||
| Sikandar Aftab | |||
| Yongho Seo | |||
| P2860 | cites work | Atomically Thin MoS 2 : A New Direct-Gap Semiconductor | Q21706555 |
| Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions | Q34023365 | ||
| Emerging photoluminescence in monolayer MoS2. | Q34104018 | ||
| Single-layer MoS2 transistors | Q34161525 | ||
| Control of valley polarization in monolayer MoS2 by optical helicity. | Q34282213 | ||
| Valley polarization in MoS2 monolayers by optical pumping | Q34282219 | ||
| Laser-thinning of MoS₂: on demand generation of a single-layer semiconductor | Q34285055 | ||
| Ultrasensitive photodetectors based on monolayer MoS2 | Q34349514 | ||
| Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters | Q34598245 | ||
| Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials | Q34598320 | ||
| Transfer of large-area graphene films for high-performance transparent conductive electrodes | Q35008831 | ||
| Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide | Q35247097 | ||
| Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures | Q37507003 | ||
| The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets | Q38091257 | ||
| Van der Waals heterostructures | Q38124232 | ||
| Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates | Q38729733 | ||
| Barrier inhomogeneities at vertically stacked graphene-based heterostructures | Q39311181 | ||
| Where does the current flow in two-dimensional layered systems? | Q39396163 | ||
| Single-layer MoS2 phototransistors. | Q39676114 | ||
| Lateral graphene-hBCN heterostructures as a platform for fully two-dimensional transistors | Q40023812 | ||
| Nonvolatile memory cells based on MoS2/graphene heterostructures | Q40099268 | ||
| Tuning on-off current ratio and field-effect mobility in a MoS(2)-graphene heterostructure via Schottky barrier modulation. | Q40190966 | ||
| Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes | Q43615061 | ||
| Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures. | Q45995869 | ||
| Toward barrier free contact to molybdenum disulfide using graphene electrodes. | Q46751557 | ||
| Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. | Q48220957 | ||
| Atomically thin p-n junctions with van der Waals heterointerfaces | Q48282935 | ||
| MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap. | Q50495570 | ||
| Optical identification of single- and few-layer MoS₂ sheets. | Q50519475 | ||
| Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. | Q50876595 | ||
| Chemical Sensing of 2D Graphene/MoS2 Heterostructure device. | Q50885060 | ||
| Vertical and in-plane heterostructures from WS2/MoS2 monolayers. | Q51049477 | ||
| Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2. | Q51252972 | ||
| Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode. | Q51659656 | ||
| Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics. | Q53555861 | ||
| Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions. | Q53794923 | ||
| Graphene chemistry. | Q54432049 | ||
| Resonant Tunneling through Discrete Quantum States in Stacked Atomic-Layered MoS2 | Q57759845 | ||
| Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide | Q57864673 | ||
| Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics | Q59482598 | ||
| Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures | Q59482608 | ||
| High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals | Q61207382 | ||
| Investigation of MoS2 and Graphene Nanosheets by Magnetic Force Microscopy | Q62395358 | ||
| Anomalous lattice vibrations of single- and few-layer MoS2 | Q84064602 | ||
| In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes | Q85962675 | ||
| P275 | copyright license | Creative Commons Attribution 4.0 International | Q20007257 |
| P6216 | copyright status | copyrighted | Q50423863 |
| P433 | issue | 1 | |
| P921 | main subject | graphene | Q169917 |
| field-effect transistor | Q176097 | ||
| P577 | publication date | 2017-12-28 | |
| P1433 | published in | Nanomaterials | Q27724944 |
| P1476 | title | Gate Tunable Transport in Graphene/MoS₂/(Cr/Au) Vertical Field-Effect Transistors | |
| P478 | volume | 8 |
| Q93060035 | Designing a Novel Monolayer β-CSe for High Performance Photovoltaic Device: An Isoelectronic Counterpart of Blue Phosphorene |
| Q64899405 | Field Emission Characterization of MoS2 Nanoflowers. |
| Q92290116 | Probing Charge Transport Difference in Parallel and Vertical Layered Electronics with Thin Graphite Source/Drain Contacts |
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