| scholarly article | Q13442814 |
| P2093 | author name string | Faisal Ahmed | |
| Won Jong Yoo | |||
| Xiaochi Liu | |||
| Daeyeong Lee | |||
| Deshun Qu | |||
| P2860 | cites work | Layer-by-layer thinning of MoS₂ by thermal annealing. | Q51176162 |
| Thermionic emission and tunneling at carbon nanotube-organic semiconductor interface. | Q53099200 | ||
| Metal-insulator crossover in multilayered MoS2. | Q53196814 | ||
| Study on the resistance distribution at the contact between molybdenum disulfide and metals. | Q53500026 | ||
| Bandgap, mid-gap states, and gating effects in MoS2. | Q53507312 | ||
| Resonant Tunneling through Discrete Quantum States in Stacked Atomic-Layered MoS2 | Q57759845 | ||
| Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide | Q57864673 | ||
| Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT | Q58775848 | ||
| Black phosphorus field-effect transistors | Q28308156 | ||
| Electronic transport in two-dimensional graphene | Q29031371 | ||
| Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors | Q33356205 | ||
| Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions | Q34023365 | ||
| Boron nitride substrates for high-quality graphene electronics. | Q34132620 | ||
| Single-layer MoS2 transistors | Q34161525 | ||
| Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters | Q34598245 | ||
| Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials | Q34598320 | ||
| Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide | Q35247097 | ||
| Carrier transport at the metal-MoS2 interface | Q39012524 | ||
| Barrier inhomogeneities at vertically stacked graphene-based heterostructures | Q39311181 | ||
| Where does the current flow in two-dimensional layered systems? | Q39396163 | ||
| Layer-dependent electrocatalysis of MoS2 for hydrogen evolution. | Q44871882 | ||
| Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers. | Q45923327 | ||
| Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices. | Q45953470 | ||
| 2D crystal semiconductors: Intimate contacts | Q46349650 | ||
| Toward barrier free contact to molybdenum disulfide using graphene electrodes. | Q46751557 | ||
| Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS2 and WS2 monolayers | Q46829116 | ||
| Screening and interlayer coupling in multilayer graphene field-effect transistors | Q48265704 | ||
| P433 | issue | 45 | |
| P407 | language of work or name | English | Q1860 |
| P921 | main subject | graphene | Q169917 |
| P304 | page(s) | 19273-19281 | |
| P577 | publication date | 2015-11-04 | |
| P1433 | published in | Nanoscale | Q3335756 |
| P1476 | title | Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode. | |
| P478 | volume | 7 |
| Q48055416 | A Novel and Facile Route to Synthesize Atomic-Layered MoS2 Film for Large-Area Electronics |
| Q47748771 | Carrier-Type Modulation and Mobility Improvement of Thin MoTe2. |
| Q49994635 | Electron dynamics in MoS2-graphite heterostructures |
| Q47214460 | Gate Tunable Transport in Graphene/MoS₂/(Cr/Au) Vertical Field-Effect Transistors |
| Q48043051 | Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures. |
| Q92290116 | Probing Charge Transport Difference in Parallel and Vertical Layered Electronics with Thin Graphite Source/Drain Contacts |
| Q40425067 | Study of graphene plasmons in graphene-MoS2 heterostructures for optoelectronic integrated devices |
| Q51373248 | Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures. |
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