| human | Q5 |
| P1960 | Google Scholar author ID | mco8IdQAAAAJ |
| P6479 | IEEE Xplore author ID | 37085610809 |
| P496 | ORCID iD | 0000-0001-8023-3055 |
| P2038 | ResearchGate profile ID | John_L_Lyons |
| P69 | educated at | University of Wisconsin–Madison | Q838330 |
| University of California, Santa Barbara | Q263064 | ||
| P108 | employer | United States Naval Research Laboratory | Q1499258 |
| Brookhaven National Laboratory | Q585777 | ||
| P734 | family name | Lyons | Q16931637 |
| Lyons | Q16931637 | ||
| Lyons | Q16931637 | ||
| P735 | given name | John | Q4925477 |
| John | Q4925477 | ||
| P106 | occupation | researcher | Q1650915 |
| P21 | sex or gender | male | Q6581097 |
| Q100675984 | Atomic Layer Epitaxy of III-Nitrides: A Microscopic Model of Homoepitaxial Growth |
| Q101219867 | Band Alignment of ScxAl1-xN/GaN Heterojunctions |
| Q56422870 | Band alignments and polarization properties of BN polymorphs |
| Q59433522 | Carbon-induced trapping levels in oxide dielectrics |
| Q92489912 | Correction to Ultrathin Amorphous Titania on Nanowires: Optimization of Conformal Growth and Elucidation of Atomic-Scale Motifs |
| Q89872860 | Effect of Anisotropic Confinement on Electronic Structure and Dynamics of Band Edge Excitons in Inorganic Perovskite Nanowires |
| Q92014088 | Exciton Fine Structure in Perovskite Nanocrystals |
| Q56423255 | First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO |
| Q59433541 | First-principles study of vacancy-assisted impurity diffusion in ZnO |
| Q59433520 | First-principles theory of acceptors in nitride semiconductors |
| Q56422809 | Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters |
| Q59433493 | Identification of Microscopic Hole-Trapping Mechanisms in Nitride Semiconductors |
| Q56423053 | Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN |
| Q56423073 | Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices |
| Q92171992 | Quasicubic model for metal halide perovskite nanocrystals |
| Q50247071 | Shallow versus deep nature of Mg acceptors in nitride semiconductors. |
| Q59433565 | Shedding light on doping of gallium nitride |
| Q59433514 | Sulfur doping of AlN and AlGaN for improved n-type conductivity |
| Q46650279 | Surprising stability of neutral interstitial hydrogen in diamond and cubic BN. |
| Q56423188 | Theory and Modeling of Oxide Semiconductors |
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