Growth and characterisation of GaN with reduced dislocation density

Growth and characterisation of GaN with reduced dislocation density is …
instance of (P31):
scholarly articleQ13442814

External links are
P356DOI10.1016/J.SPMI.2004.09.003

P2093author name stringR. Datta
C.J. Humphreys
M.J. Kappers
J.S. Barnard
M.E. Vickers
P433issue4-6
P304page(s)393-401
P577publication date2004-10-01
P1433published inSuperlattices and MicrostructuresQ5261623
P1476titleGrowth and characterisation of GaN with reduced dislocation density
P478volume36

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cites work (P2860)
Q48222922Deep-Ultraviolet AlGaN/AlN Core-Shell Multiple Quantum Wells on AlN Nanorods via Lithography-Free Method.
Q30866715Lattice distortions in GaN on sapphire using the CBED-HOLZ technique
Q35618438Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials
Q41637001Tilt-less 3-D electron imaging and reconstruction of complex curvilinear structures.