scholarly article | Q13442814 |
P356 | DOI | 10.1103/PHYSREVB.35.2732 |
P698 | PubMed publication ID | 9941749 |
P2093 | author name string | Andersen JU | |
Bech Nielsen B | |||
P433 | issue | 6 | |
P407 | language of work or name | English | Q1860 |
P304 | page(s) | 2732-2739 | |
P577 | publication date | 1987-02-01 | |
P1433 | published in | Physical Review B | Q2284414 |
P1476 | title | Beam-induced annealing of defects in silicon after light-ion implantation at 30 K | |
P478 | volume | 35 |
Q78179438 | Effect of uniaxial stress on local vibrational modes of hydrogen in ion-implanted silicon |
Q78013958 | Hydrogen-related center with tetrahedral symmetry in ion-implanted silicon |
Q77996643 | Interaction of deuterium with defects in silicon studied by means of channeling |
Q74488067 | Lattice location of deuterium interacting with the boron acceptor in silicon |
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