Beam-induced annealing of defects in silicon after light-ion implantation at 30 K

scientific article published on 01 February 1987

Beam-induced annealing of defects in silicon after light-ion implantation at 30 K is …
instance of (P31):
scholarly articleQ13442814

External links are
P356DOI10.1103/PHYSREVB.35.2732
P698PubMed publication ID9941749

P2093author name stringAndersen JU
Bech Nielsen B
P433issue6
P407language of work or nameEnglishQ1860
P304page(s)2732-2739
P577publication date1987-02-01
P1433published inPhysical Review BQ2284414
P1476titleBeam-induced annealing of defects in silicon after light-ion implantation at 30 K
P478volume35

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cites work (P2860)
Q78179438Effect of uniaxial stress on local vibrational modes of hydrogen in ion-implanted silicon
Q78013958Hydrogen-related center with tetrahedral symmetry in ion-implanted silicon
Q77996643Interaction of deuterium with defects in silicon studied by means of channeling
Q74488067Lattice location of deuterium interacting with the boron acceptor in silicon

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