Interaction of deuterium with defects in silicon studied by means of channeling

scientific article published on 01 April 1988

Interaction of deuterium with defects in silicon studied by means of channeling is …
instance of (P31):
scholarly articleQ13442814

External links are
P356DOI10.1103/PHYSREVB.37.6353
P698PubMed publication ID9943877

P2093author name stringNielsen BB
P2860cites workBeam-induced annealing of defects in silicon after light-ion implantation at 30 KQ77987931
P433issue11
P407language of work or nameEnglishQ1860
P304page(s)6353-6367
P577publication date1988-04-01
P1433published inPhysical Review BQ2284414
P1476titleInteraction of deuterium with defects in silicon studied by means of channeling
P478volume37